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1.5a step-down/step-up/inverting dc-dc co nverter az34063u 1 jan. 2013 rev. 1. 3 bcd semiconductor manufacturing limited data sheet general description the az34063u is a monolithic switching regulator control circuit which cont ains the primary functions required for dc-dc converters. this device consists of internal temperature comp ensated reference, voltage comparator, controlled duty cy cle oscillator with active current limit circuit, driv er and high current output switch. the az34063u is specifically designed as a general dc-dc converter to be used in step-down, step-up and voltage-inverting applications with a minimum number of external components. the az34063u is available in 2 packages: soic-8 and dip-8. features ? operation from 3.0v to 36v input ? low standby current ? current limiting ? output switch current to 1.5a ? output voltage adjustable ? operation frequency up to 180khz ? precision 2% reference applications battery chargers adsl modems hubs negative voltage power supplies figure 1. package types of az34063u soic-8 dip-8
1.5a step-down/step-up/inverting dc-dc co nverter az34063u 2 jan. 2013 rev. 1. 3 bcd semiconductor manufacturing limited data sheet figure 2. pin configuration of az34063u (top view) m package (dip-8) pin configuration functional block diagram figure 3. functional block diagram of az34063u switch timing switch gnd i pk sense v cc comparator inverting input collector capacitor emitter driver collector switch collector switch emitter timing capacitor gnd driver collector i pk sense v cc comparator inverting input + - ipk b 1.25v reference regulator a 8 7 54 3 2 1 s r q 6 i pk c t osc 1 4 3 2 5 6 8 7 (soic-8) p package switch timing switch gnd i pk sense v cc comparator inverting input collector capacitor emitter driver collector 1 2 3 4 8 7 6 5 1 2 3 4 8 7 6 5
1.5a step-down/step-up/inverting dc-dc co nverter az34063u 3 jan. 2013 rev. 1. 3 bcd semiconductor manufacturing limited data sheet package temperature range part number marking id packing type soic-8 -40 to 85 o c az34063um-g1 34063um-g1 tube AZ34063UMTR-G1 34063um-g1 tape & reel dip-8 -40 to 85 o c az34063up-g1 az34063up-g1 tube circuit type package m: soic-8 az34063u - tr: tape and reel blank: tube p: dip-8 pin number pin name function 1 switch collector internal switch transistor collector 2 switch emitter internal switch transistor emitter 3 timing capacitor timing capacitor to control the switching frequency 4 gnd ground pin for all internal circuits 5 comparator inverting input inverting input pin for internal comparator 6v cc voltage supply 7 i pk sense peak current sense input by monitoring the voltage drop across an external current sense resistor to limit the peak cur- rent through the switch 8 driver collector voltage driver collector pin description ordering information bcd semiconductor's pb-free products, as desi gnated with "g1" suffix in the part number, are rohs compliant and green. g1: green
1.5a step-down/step-up/inverting dc-dc co nverter az34063u 4 jan. 2013 rev. 1. 3 bcd semiconductor manufacturing limited data sheet note 1: stresses greater than those li sted under "absolute maximum ratings" may cause permanent dama ge to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolut e maximum ratings" for extended periods may affect device reliability. note 2: maximum package power diss ipation limits must be observed. recommended operating conditions parameter symbol min max unit supply voltage v cc 336v ambient temperature t a -40 85 o c parameter symbol value unit power supply voltage v cc 40 v comparator input voltage range v ir -0.3 to 40 v switch collector voltage v c (switch) 40 v switch emitter voltage (v pin 1 =40v) v e (switch) 40 v switch collector to emitter voltage v ce (switch) 40 v driver collector voltage v c (driver) 40 v driver collector current (note 2) i c (driver) 100 ma switch current i sw 1.5 a power dissipation (t a =25 o c) dip-8 p d 1.25 w soic-8 780 mw thermal resistance dip-8 ja 100 o c/w soic-8 160 operating junction temperature t j 150 o c lead temperature (soldering, 10s) t lead 260 o c storage temperature range t stg -65 to 150 o c esd (human body model) 2000 v absolute maximum ratings (note 1)
1.5a step-down/step-up/inverting dc-dc co nverter az34063u 5 jan. 2013 rev. 1. 3 bcd semiconductor manufacturing limited data sheet ( v cc =5.0v, t a =-40 to 85 o c, unless otherwise specified.) note 3: low duty cycle pulse technique are used during test to maintain junction temperature as close to ambient temperature as possible. note 4: if the output switch is driven into hard saturation (non-darlington conf iguration) at low switch currents ( 300ma) and high driver currents ( 30ma), it may take up to 2.0 s for it to come out of saturation. this condition will shorten the off time at frequencies 30khz, and is magnified at high temperatures. this condition does not occur with a da rlington configuration, since the output switch cannot sa turate. if a non-darlington configuration is used , the following output drive condition is rec - ommended: parameter symbol conditions min typ max unit oscillator frequency f osc v pin5 =0v, c t =1.0nf t a =25 o c 30 38 45 khz charge current i chg v cc =5.0v to 36v, t a =25 o c 30 38 45 a discharge current i dischg v cc =5.0v to 36v, t a =25 o c 180 240 290 a discharge to charge current ratio i dischg /i chg pin 7 to v cc , t a =25 o c 5.2 6.5 7.5 current limit sense voltage v ipk (sense) i chg =i dischg , t a =25 o c 250 300 350 mv output switch (note 3) saturation voltage, dalington connection v ce (sat) i sw =1.0a, pins 1, 8 connected, common emitter 1.0 1.3 v saturation voltage (note 4.) v ce (sat) i sw =1.0a, r pin8 =82 to v cc , forced =20, common emitter 0.45 0.7 v dc current gain h fe i sw =1.0a, v ce =5.0v, t a =25 o c 50 75 collector off-state current i c (off) v ce =36v 0.01 100 a comparator threshold voltage v th t a =25 o c 1.225 1.250 1.275 v t a =-40 to 85 o c 1.21 1.250 1.29 threshold voltage line regulation r egline v cc =3.0v to 36v 1.4 5 mv input bias current i ib v in =0v -20 -400 na total device supply current i cc v cc =5.0v to 36v, c t =1.0nf, v pin7 =v cc , v pin5 >v th , v pin2 =gnd, other pins open 4ma electrical characteristics
1.5a step-down/step-up/inverting dc-dc co nverter az34063u 6 jan. 2013 rev. 1. 3 bcd semiconductor manufacturing limited data sheet figure 4. output switch on-off time vs. figure 5. timing capacitor waveform typical performance characteristics oscillator timing capacitor i c output 10 forced of output switch: * the 100 resistor in the emitter of the driver device re quires about 7.0 ma before the output switch conducts. i c driver - 7.0ma* time 20 s/div pin 1,5,8=open c t =1.0nf t a =25 o c v cc =5.0v v pin7 =v cc v pin2 =gnd figure 6. oscillator frequency vs.t iming capacitor figure 7. standard supply current vs. supply voltage electrical characteristics (continued) 0 5 10 15 20 25 30 35 40 0.5 1.0 1.5 2.0 2.5 3.0 3.5 c t =1.0nf v pin7 =v cc v pin2 =gnd i cc supply current (ma) v cc supply voltage (v) 0.1 1 10 100 1 10 100 1000 t off t on v cc =5.0v v pin7 =v cc v pin5 =gnd t a =25 o c ton-off output switch on-off time ( s) c t oscillator timing capacitor (nf) ( v cc =5.0v, t a =25 o c, unless otherwise specified.) 0.1 1 10 100 1 10 100 oscillator frequency (khz) c t timing capacitor (nf) v cc =5.0v v pin7 =v cc v pin5 =gnd t a =25 o c v osc oscillator voltage (v) 200mv/div
1.5a step-down/step-up/inverting dc-dc co nverter az34063u 7 jan. 2013 rev. 1. 3 bcd semiconductor manufacturing limited data sheet figure 8. emitter follower configuration output figure 9. common emitter co nfiguration output switch saturation voltage vs. emitter current saturation voltage vs. collector current figure 10. current limit sens e voltage vs. temperature typical performance ch aracteristics (continued) -0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.2 1.3 1.4 1.5 1.6 v cc =5.0v v pin1,7,8 =v cc v pin3,5 =gnd t a =25 o c saturation voltage (v) emitter current (a) 0.00.20.40.60.81.01.21.41.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 darlington connection forced =20 v cc =5.0v v pin7 =v cc v pin2,3,5 =gnd t a =25 o c saturation voltage (v) collector current (a) -60 -40 -20 0 20 40 60 80 100 120 140 240 250 260 270 280 290 300 temperature ( o c) current limit sense voltage (mv) -40 0 40 80 120 160 1.224 1.232 1.240 1.248 1.256 feedback voltage (v) temperature ( o c) figure 11. feedback voltage vs. temperature ( v cc =5.0v, t a =25 o c, unless otherwise specified.)
1.5a step-down/step-up/inverting dc-dc co nverter az34063u 8 jan. 2013 rev. 1. 3 bcd semiconductor manufacturing limited data sheet ( v cc =5.0v, t a =25 o c, unless otherwise specified.) typical performance ch aracteristics (continued) -40 0 40 80 120 160 60 80 100 120 140 operation frequency (khz) temperature ( o c) v cc =5.0v c t =330pf figure 12. operation frequency vs. temperature -40 0 40 80 120 160 0.8 1.0 1.2 1.4 saturation voltage (v) temperature ( o c) i sw =1.0a v cc =5.0v pin1 pin8 connected figure 13. saturation voltage vs. temperature
1.5a step-down/step-up/inverting dc-dc co nverter az34063u 9 jan. 2013 rev. 1. 3 bcd semiconductor manufacturing limited data sheet typical applications figure 14. step-up converter (note 5) note 5: this is a typical step-up converter configuration. in the steady state, if the re sistor divider voltage at pin 5 is greater than the voltage in the non-inverting input, which is 1.25v determined by the internal reference, the output of the comparator will go low. at the next swithching pe riod, the output switch will not conduct and the output voltage will eventually drop below its nominal voltag e until the divider voltage at pin 5 is lower than 1.25v. then the output of the co mparator will go high, the output switch will be allowed to conduct. since v pin5 =v out * r2/(r1+r2)=1.25(v), the output voltage can be decided by v out =1.25 * (r1+r2)/r2 (v). + - ipk b 1.25v reference regulator a 5 s r q i pk c t osc v in 12v c1 100 f r3 180 c t 470pf l1 150 h d1 1n5819 l2 1.0 ? c3 100 f optional filter v out + + u1 az34063u r1 47k r2 2.2k c2 330 f 28v/175ma + rsc 0.22 6 7 8 1 2 3 4 v out
1.5a step-down/step-up/inverting dc-dc co nverter az34063u 10 jan. 2013 rev. 1. 3 bcd semiconductor manufacturing limited data sheet figure 15. step-down converter (note 6) typical applicat ions (continued) + - ipk b 1.25v reference regulator a 1 s r q i pk c t osc v in 25v c1 100 f rsc 0.33 l2 1.0 h c3 100 f optional filter 5v/500ma v out d1 1n5819 l1 220 h c t 470 pf + + r1 3.6k r2 1.2k c2 470 f + u1 az34063u 2 3 4 5 6 7 8 v out note 6: this is a typical step-down converter configuration. the working pr ocess in the steady state is similar to step-up converter, v pin5 =v out *r2/(r1+r2)=1.25 (v), the out put voltage can be decided by v out =1.25* (r1+r2)/r2 (v).
1.5a step-down/step-up/inverting dc-dc co nverter az34063u 11 jan. 2013 rev. 1. 3 bcd semiconductor manufacturing limited data sheet figure 16. voltage inverting converter (note 7) typical applicat ions (continued) note 7: this is a typical inverting converter configurat ion. the working process in the steady state is similar to step-up converter, the difference in this situation is that the voltage at the non-inverti ng pin of the comparator is equal to 1.25v+v out , then v pin5 =v out *r2/(r1+r2)=1.25v+v out , so the output voltage can be decided by v out =-1.25*(r1+r2)/r1 (v). + - ipk b 1.25v reference regulator a 8 s r q i pk c t osc v in 4.5-6v c1 100 f rsc 0.24 l2 1.0 ? optional filter v out d1 1n5819 l1 88 ? + c3 100 f + c t 470pf r1 953 r2 8.2k c2 1000 f -12v/100ma + u1 az34063u 7 6 54 3 2 1 v out
1.5a step-down/step-up/inverting dc-dc co nverter az34063u 12 jan. 2013 rev. 1. 3 bcd semiconductor manufacturing limited data sheet mechanical dimensions soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) note: eject hole, oriented hole and mold mark is optional.
1.5a step-down/step-up/inverting dc-dc co nverter az34063u 13 jan. 2013 rev. 1. 3 bcd semiconductor manufacturing limited data sheet mechanical dimens ions (continued) dip-8 unit: mm(inch) 4 6 r0.750(0.030) 0.254(0.010)typ 0.130(0.005)min 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) 7.620(0.300)typ 4 6 5 0.700(0.028) 9.000(0.354) 9.600(0.378) 3.710(0.146) 4.310(0.170) 3.000(0.118) 3.600(0.142) 0.360(0.014) 0.560(0.022) 2.540(0.100) typ 6.200(0.244) 6.600(0.260) 3.200(0.126) 3.600(0.142) 0.510(0.020)min 3.000(0.118) depth 0.100(0.004) 0.200(0.008) 1.524(0.060) typ note: eject hole, oriented hole and mold mark is optional.
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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